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| Ordering number : ENA1224 ECH8659 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET ECH8659 Features * * * General-Purpose Switching Device Applications 4V drive. Composite type, facilitating high-density mounting. Halogen free compliance. Specifications Absolute Maximum Ratings at Ta=25C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg PW10s, duty cycle1% When mounted on ceramic substrate (900mm20.8mm) 1unit When mounted on ceramic substrate (900mm20.8mm) Conditions Ratings 30 20 7 40 1.3 1.5 150 --55 to +150 Unit V V A A W W C C Electrical Characteristics at Ta=25C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs Conditions ID=1mA, VGS=0V VDS=30V, VGS=0V VGS=16V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=3.5A 1.2 2.2 3.7 Ratings min 30 1 10 2.6 typ max Unit V A A V S Marking : TE Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 61808PA TI IM TC-00001318 No. A1224-1/4 ECH8659 Continued from preceding page. Parameter Symbol RDS(on)1 RDS(on)2 RDS(on)3 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions ID=3.5A, VGS=10V ID=2A, VGS=4.5V ID=2A, VGS=4V VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=15V, VGS=10V, ID=3.5A VDS=15V, VGS=10V, ID=3.5A VDS=15V, VGS=10V, ID=3.5A IS=7A, VGS=0V Ratings min typ 18 29 39 710 120 72 10 25 43 25 11.8 2.4 2.0 0.79 1.2 max 24 41 55 Unit m m m pF pF pF ns ns ns ns nC nC nC V Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage Package Dimensions unit : mm (typ) 7011A-001 Top View 0.25 Electrical Connection 8 7 6 5 2.9 0.15 8 5 0 to 0.02 2.8 2.3 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 Top view 1 4 0.65 0.3 2 3 4 0.9 0.25 1 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 Bottom View 0.07 SANYO : ECH8 Switching Time Test Circuit VIN 10V 0V VIN ID=3.5A RL=4.3 VDD=15V D PW=10s D.C.1% VOUT G ECH8659 P.G 50 S No. A1224-2/4 ECH8659 16.0V 10.0V 8.0V 6.0V 4.5V 4.0V 7 ID -- VDS 3.5 V 14 13 12 11 ID -- VGS VDS=10V 6 Drain Current, ID -- A 5 Drain Current, ID -- A 10 9 8 7 6 4 3 2 VGS=3.0V 4 3 1 0 0 0.2 0.4 0.6 0.8 1.0 IT13723 2 1 0 0 0.5 1.0 1.5 2.0 2.5 3.0 25C --25 C 3.5 4.0 5 Ta= 7 5C 4.5 5.0 Drain-to-Source Voltage, VDS -- V 80 RDS(on) -- VGS Gate-to-Source Voltage, VGS -- V 70 IT13724 RDS(on) -- Ta Ta=25C Static Drain-to-Source On-State Resistance, RDS(on) -- m 70 60 50 40 30 20 10 0 0 2 4 6 8 10 12 14 16 Static Drain-to-Source On-State Resistance, RDS(on) -- m 60 ID=2A 3.5A 50 40 30 20 .0A , I D=2 =4.0V V GS 2.0A , I D= =4.5V VGS .5A , I D=3 10.0V V GS= 10 0 --60 --40 --20 0 20 40 60 80 100 120 140 160 Gate-to-Source Voltage, VGS -- V 10 IT13725 3 2 10 7 5 Ambient Temperature, Ta -- C IT13726 yfs -- ID VDS=10V IS -- VSD VGS=0V Forward Transfer Admittance, yfs -- S 7 5 2 1.0 7 5 3 2 C 5 --2 a= C T 75 Source Current, IS -- A 3 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0.1 7 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Drain Current, ID -- A 100 7 5 7 10 2 IT13727 0.01 0.3 0.4 0.5 Ta = 0.6 --25 C 0.7 0.8 75 C 25 C C 25 0.9 1.0 IT13728 SW Time -- ID td(off) 2 Ciss, Coss, Crss -- VDS f=1MHz Ciss Diode Forward Voltage, VSD -- V Switching Time, SW Time -- ns 5 3 2 1000 Ciss, Coss, Crss -- pF 7 5 3 2 tf tr 10 7 5 3 2 0.1 2 3 td(on) 100 7 Coss Crss VDD=15V VGS=10V 5 7 1.0 2 3 5 7 10 2 3 5 3 0 5 10 15 20 25 30 IT13730 Drain Current, ID -- A IT13729 Drain-to-Source Voltage, VDS -- V No. A1224-3/4 ECH8659 10 9 VGS -- Qg VDS=15V ID=3.5A Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V 8 7 6 5 4 3 2 1 0 0 1 2 3 4 5 6 7 8 9 10 11 12 100 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 ASO IDP=40A PW10s ID=7A 10 1m s 10 0m 10 0 s ms DC Operation in this area is limited by RDS(on). s op era tio n 0.01 0.01 Ta=25C Single pulse When mounted on ceramic substrate (900mm20.8mm) 1unit 23 5 7 0.1 23 5 7 1.0 23 5 7 10 23 5 Total Gate Charge, Qg -- nC 1.8 IT13731 PD -- Ta When mounted on ceramic substrate (900mm20.8mm) Drain-to-Source Voltage, VDS -- V IT13732 Allowable Power Dissipation, PD -- W 1.6 1.5 1.4 1.3 1.2 1.0 0.8 0.6 0.4 0.2 0 0 20 40 To t al Di 1u ss nit ip ati on 60 80 100 120 140 160 Ambient Temperature, Ta -- C IT13733 Note on usage : Since the ECH8659 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of June, 2008. Specifications and information herein are subject to change without notice. PS No. A1224-4/4 |
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